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參數資料
| 型號： | MMBZ5260B-V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 齊納二極管 |
| 英文描述： | 43 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 76K |
| 代理商： | MMBZ5260B-V-GS18 |
MMBZ5225-V to MMBZ5267-V
Document Number 85772
Rev. 1.5, 23-Feb-10
Vishay Semiconductors
www.vishay.com
1
18078
12
3
For technical support, please contact: DiodesSSP@vishay.com
Small Signal Zener Diodes
Features
Silicon planar power zener diodes.
Standard Zener voltage tolerance is ± 5 %
with a "B" suffix (e.g.: MMBZ5225B-V),
suffix “C” is ± 2 % tolerance.
High temperature soldering guaranteed:
260 °C/ 4x 10 s at terminals.
These diodes are also available in MiniMELF case
with the type designation ZMM5225...ZMM5267,
SOD-123
case
with
the
type
designation
MMSZ5225-V... MMSZ5267-V.
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Notes
1) On FR - 5 board using recommended solder pad layout
2) On alumina substrate
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Note
1) On FR - 5 board using recommended solder pad layout
Parameter
Test condition
Symbol
Value
Unit
Zener current
(see table "Characteristics")
Power dissipation
TA = 25 °C
Ptot
225 1)
mW
Ptot
300 2)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RthJA
556 1)
°C/W
Maximum junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 175
°C
相關PDF資料 |
PDF描述 |
|---|---|
| MMBZ5260B-V | 43 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| MMBZ5260C-V-GS08 | 43 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5261B-V-GS08 | 47 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5261C-V-GS18 | 47 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5262B-V | 51 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBZ5260BW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| MMBZ5260BW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| MMBZ5260C-V-GS08 | 功能描述:穩(wěn)壓二極管 43 Volt 0.3W 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5260C-V-GS18 | 功能描述:穩(wěn)壓二極管 43 Volt 0.3 Watt 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5261B _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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