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參數(shù)資料
| 型號： | MMBZ5246BT |
| 廠商： | Diodes Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | 100mA, 5.0V Output, Low Dropout Voltage Regulator with 60V Load Dump Protection; Pb Free Device; Package: 3 LEAD D2PAK; No of Pins: 3; Container: Rail; Qty per Container: 50 |
| 中文描述： | 為150mW表面貼裝穩(wěn)壓二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 79K |
| 代理商： | MMBZ5246BT |
Part Number: MMBZ5221BW thru MMBZ5259BW
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ELECTRICAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted) V
F
=1.2V max, I
F
=100mA for all types.
NOTE:
1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2.Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3.Zener Voltage (V
Z
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
L
) at 30
O
C, from the diode body.
4.Zener Impedance (Z
Z
) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
5.Surge Current (I
R
) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC registration; however, actual device capability is as described in Figure 5.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBZ5246BTS | surface mount silicon Zener diodes |
| MMBZ5246BW | 100mA, 5.0V Output, Low Dropout Voltage Regulator with 60V Load Dump Protection- Pb Free Device; Package: 3 LEAD D2PAK; No of Pins: 3; Container: Tape and Reel; Qty per Container: 800 |
| MMBZ5248BS | 5-30V Single Comparator, Ta = 0 to +70°C; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98 |
| MMBZ5248BT | 5-30V Single Comparator, Ta = 0 to +70°C - Pb-free; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tube; Qty per Container: 98 |
| MMBZ5248BTS | 5-30V Single Comparator, Ta = 0 to +70°C; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ5246BT-7 | 功能描述:穩(wěn)壓二極管 150MW 16V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5246BT-7-F | 功能描述:穩(wěn)壓二極管 150MW 16V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5246B-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Zener Single 16V 5% 350mW 3-Pin SOT-23 T/R |
| MMBZ5246BTS-7 | 功能描述:穩(wěn)壓二極管 200MW 16V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5246BTS-7-F | 功能描述:穩(wěn)壓二極管 200MW 16V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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