參數(shù)資料
型號： MMBZ20VALT3
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
中文描述： 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236
封裝： PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù)： 3/6頁
文件大?。?/td> 129K
代理商： MMBZ20VALT3
3
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
PD
TEMPERATURE (
°
C)
FR–5 BOARD
ALUMINA SUBSTRATE
0
1
2
3
320
280
240
160
120
40
0
Figure 4. Steady State Power Derating Curve
C
BIAS (V)
200
80
15 V
V
100
50
0
0
1
2
3
4
t, TIME (ms)
Figure 5. Pulse Waveform
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IRSM.
tr
≤
10
μ
s
HALF VALUE —
IRSM
2
tP
tr
PEAK VALUE — IRSM
100
90
80
70
60
50
40
30
20
10
0
0
25
50
TA, AMBIENT TEMPERATURE (
°
C)
75
100
125
150
175
200
Figure 6. Pulse Derating Curve
P
O
°
Figure 7. Maximum Non–repetitive Surge
Power, Ppk versus PW
p
0.1
1
10
100
1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
BIDIRECTIONAL
Figure 8. Maximum Non–repetitive Surge
Power, Ppk(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
P
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
MMBZ5V6ALT1
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
UNIDIRECTIONAL
5.6 V
相關PDF資料
PDF描述
MMBZ20VALT3G 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ5V6ALT1G 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ5V6ALT3 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ5V6ALT3G 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ6V2ALT1 SOT-23 COMMON ANODE DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 24 & 40 WATTS PEAK POWER
相關代理商/技術參數(shù)
參數(shù)描述
MMBZ20VALT3G 功能描述:TVS二極管陣列 20V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
MMBZ20VCL 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 17V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 17V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 17V, SOT23; Reverse Stand-Off Voltage Vrwm:17V; Breakdown Voltage Min:19V; Breakdown Voltage Max:21V; Clamping Voltage Vc Max:28V; Peak Pulse Current Ippm:1.4A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes
MMBZ20VCL,215 功能描述:ESD 抑制器 Diode TVS Dual/Singl 17V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C
MMBZ20VCL/DG 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression
MMBZ20VCL215 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
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