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參數(shù)資料
| 型號： | MMBZ18VAL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 20W和40W峰值功率齊納瞬態(tài)電壓抑制器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 71K |
| 代理商： | MMBZ18VAL |
DS30306 Rev. 5 - 2
1 of 4
MMBZ5V6AL - MMBZ33VAL
www.diodes.com
MMBZ5V6AL - MMBZ33VAL
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
Dual TVS in Common Anode Configuration
24W/40W Peak Power Dissipation Rating
@ 1.0ms (Unidirectional)
225 mW Power Dissipation
Ideally Suited for Automatic Insertion
Low Leakage
Features
Characteristic
Symbol
P
d
P
pk
P
pk
R
JA
T
j
,T
STG
Value
225
24
40
556
–65 to +150
Unit
mW
Power Dissipation (Note 1)
Peak Power Dissipation (Note 2) MMBZ5V6AL - MMBZ10VAL
Peak Power Dissipation (Note 2) MMBZ15VAL - MMBZ33VAL
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
W
W
°C/W
°C
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Marking Code & Date Code,
See Page 2
Marking Code: See Table Below and Page 2
Weight: 0.008 grams (Approx.)
Ordering Information: See Page 2
Mechanical Data
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
T
C
U
D
O
R
P
W
E
N
@T
A
= 25°C unless otherwise specified
Electrical Characteristics
24 Watt (V
F
= 0.9V max @ I
F
= 10mA)
Type
Number
Marking
Code
V
RWM
I
R
@
V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 2)
Typical
Temperature
Coefficient
Tc (mV/ C)
1.8
V
BR
(Note 3) (V)
@ I
T
V
C
I
PP
Volts
3
A
Min
5.32
Nom
5.6
Max
5.88
mA
20
V
A
3.0
MMBZ5V6AL
K9A
5.0
8.0
Note:
2. Non-repetitive current pulse per Figure 2 and derate above TA
= 25 C per Figure 1.
3. Short duration pulse test used to minimize self-heating effect.
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
Type
Number
Marking
Code
V
RWM
I
R
@
V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 2)
Typical
Temperature
Coefficient
Tc (%/ C)
+0.045
+0.065
+0.065
V
BR
(Note 3) (V)
@ I
T
V
C
I
PP
Volts
4.5
6.0
6.5
A
Min
6.46
8.65
9.50
Nom
6.8
9.1
10
Max
7.14
9.56
10.5
mA
1.0
1.0
1.0
V
A
2.5
1.7
1.7
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
K9C
K9D
K9E
0.5
0.3
0.3
9.6
14
14.2
24 Watt (V
F
= 1.1V max @ I
F
= 200mA)
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.903
1.10
0.45
0.61
0.085
0.180
0
8
All Dimensions in mm
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參數(shù)描述 |
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| MMBZ18VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 14.5V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
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| MMBZ18VAL-7 | 功能描述:TVS二極管陣列 18V 225mW RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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