- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384741 > MMBZ15VDLT1G (ON SEMICONDUCTOR) 40 Watt Peak Power Zener Transient Voltage Suppressors PDF資料下載
參數(shù)資料
| 型號(hào)： | MMBZ15VDLT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | MMBZ15VDLT1G |
MMBZ15VDLT1, MMBZ27VCLT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ T
L
≤
25
°
C
P
pk
40
Watts
Total Power Dissipation on FR5 Board (Note 2) @ T
A
= 25
°
C
Derate above 25
°
C
°
P
D
°
225
1.8
°
mW
°
mW/
°
C
Thermal Resistance JunctiontoAmbient
R
JA
556
°
C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ T
A
= 25
°
C
Derate above 25
°
C
°
P
D
°
300
2.4
°
mW
mW/
°
C
Thermal Resistance JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
Lead Solder Temperature Maximum (10 Second Duration)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derate above T
A
= 25
°
C per Figure 6.
2. FR5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA)
Device
Device
Marking
V
RWM
Volts
I
R
@ V
RWM
nA
Breakdown Voltage
V
C
@ I
PP
(Note 5)
V
C
V
V
BR
mV/ C
V
BR
(Note 4)
(V)
Min
Nom
@ I
T
mA
I
PP
A
Max
MMBZ15VDLT1, G*
15D
12.8
100
14.3
15
15.8
1.0
21.2
1.9
12
(V
F
= 1.1 V Max @ I
F
= 200 mA)
Device
Device
Marking
V
RWM
Volts
I
R
@ V
RWM
nA
Breakdown Voltage
V
C
@ I
PP
(Note 5)
V
C
V
V
BR
mV/ C
V
BR
(Note 4)
(V)
Min
Nom
@ I
T
mA
I
PP
A
Max
MMBZ27VCLT1, G*
*The “G” suffix indicates PbFree package available.
4. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
°
C.
5. Surge current waveform per Figure 5 and derate per Figure 6
27C
22
50
25.65
27
28.35
1.0
38
1.0
26
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBZ15VDLT3G | 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ27VCLT1G | 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ52XXBLT1 | Zener Voltage Regulators 225 mW SOT-23 Surface Mount |
| MMBZ52XXBLT1G | Zener Voltage Regulators 225 mW SOT-23 Surface Mount |
| MMBZ52XXBLT3 | Zener Voltage Regulators 225 mW SOT-23 Surface Mount |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ15VDLT1G | 制造商:ON Semiconductor 功能描述:DIODE TVS 制造商:ON Semiconductor 功能描述:DIODE, TVS |
| MMBZ15VDLT1G | 制造商:ON Semiconductor 功能描述:TVS DIODE |
| MMBZ15VDLT3 | 功能描述:TVS二極管陣列 15V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ15VDLT3G | 功能描述:TVS二極管陣列 15V 225mW Dual Common Cathode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ18VA | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。