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參數資料
| 型號： | MMBZ15VDL |
| 廠商： | Diodes Inc. |
| 英文描述： | 40W PEAK POWER DUAL SURFACE MOUNT TVS |
| 中文描述： | 40瓦峰值功率雙面瞬間抑制二極管 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 129K |
| 代理商： | MMBZ15VDL |
3
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
PD
TEMPERATURE (
°
C)
FR–5 BOARD
ALUMINA SUBSTRATE
0
1
2
3
320
280
240
160
120
40
0
Figure 4. Steady State Power Derating Curve
C
BIAS (V)
200
80
15 V
V
100
50
0
0
1
2
3
4
t, TIME (ms)
Figure 5. Pulse Waveform
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IRSM.
tr
≤
10
μ
s
HALF VALUE —
IRSM
2
tP
tr
PEAK VALUE — IRSM
100
90
80
70
60
50
40
30
20
10
0
0
25
50
TA, AMBIENT TEMPERATURE (
°
C)
75
100
125
150
175
200
Figure 6. Pulse Derating Curve
P
O
°
Figure 7. Maximum Non–repetitive Surge
Power, Ppk versus PW
p
0.1
1
10
100
1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
BIDIRECTIONAL
Figure 8. Maximum Non–repetitive Surge
Power, Ppk(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
P
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
MMBZ5V6ALT1
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
UNIDIRECTIONAL
5.6 V
相關PDF資料 |
PDF描述 |
|---|---|
| MMBZ20VAL | 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS |
| MMBZ15VDA | surface mount silicon Zener diodes |
| MMBZ15VDC | surface mount silicon Zener diodes |
| MMBZ15VDLT1 | 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ15VDLT3 | 40 Watt Peak Power Zener Transient Voltage Suppressors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBZ15VDL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 12.8V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ15VDL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ15VDL_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:40W PEAK POWER DUAL SURFACE MOUNT TVS |
| MMBZ15VDL_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:40W PEAK POWER DUAL SURFACE MOUNT TVS |
| MMBZ15VDL-7 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 225MW 12.8V RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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