參數(shù)資料
型號(hào)： MMBZ15VDL-7
廠商： DIODES INC
元件分類： 參考電壓二極管
英文描述： 40W PEAK POWER DUAL SURFACE MOUNT TVS
中文描述： 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 129K
代理商： MMBZ15VDL-7
3
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
PD
TEMPERATURE (
°
C)
FR–5 BOARD
ALUMINA SUBSTRATE
0
1
2
3
320
280
240
160
120
40
0
Figure 4. Steady State Power Derating Curve
C
BIAS (V)
200
80
15 V
V
100
50
0
0
1
2
3
4
t, TIME (ms)
Figure 5. Pulse Waveform
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IRSM.
tr
≤
10
μ
s
HALF VALUE —
IRSM
2
tP
tr
PEAK VALUE — IRSM
100
90
80
70
60
50
40
30
20
10
0
0
25
50
TA, AMBIENT TEMPERATURE (
°
C)
75
100
125
150
175
200
Figure 6. Pulse Derating Curve
P
O
°
Figure 7. Maximum Non–repetitive Surge
Power, Ppk versus PW
p
0.1
1
10
100
1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
BIDIRECTIONAL
Figure 8. Maximum Non–repetitive Surge
Power, Ppk(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
P
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
MMBZ5V6ALT1
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
UNIDIRECTIONAL
5.6 V
相關(guān)PDF資料
PDF描述
MMBZ15VDL 40W PEAK POWER DUAL SURFACE MOUNT TVS
MMBZ20VAL 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
MMBZ15VDA surface mount silicon Zener diodes
MMBZ15VDC surface mount silicon Zener diodes
MMBZ15VDLT1 40 Watt Peak Power Zener Transient Voltage Suppressors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBZ15VDL-7-F 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 225MW 12.8V RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
MMBZ15VDLDG 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression
MMBZ15VDLT1 功能描述:TVS二極管陣列 15V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
MMBZ15VDLT1_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G 功能描述:TVS二極管陣列 15V 225mW Dual Common Cathode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
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