參數(shù)資料
型號(hào): MMBZ15VDC/E9
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/2頁
文件大?。?/td> 34K
代理商: MMBZ15VDC/E9
MMBZ6V8DC/A thru MMBZ27VDC/A
Vishay Semiconductors
formerly General Semiconductor
Document Number 88358
www.vishay.com
21-May-02
1
New Product
Dual Zener Transient Voltage Suppressor
Diodes for ESD Protection
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0
.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5
)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
Features
Dual Silicon Planar Zener Diodes with Common
Cathode or Common Anode configurations.
Dual package provides for Bidirectional or
separate unidirectional configurations.
The dual configurations protect two separate lines
with only one device.
Peak Power: 40 watts @1ms (Bidirectional) .
High temperature Soldering Guaranteed:
230C for 10 seconds.
Ideal for ESD Protection.
For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3.
TO-236AB (SOT-23)
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Terminals: Solderable per MIL-STD-750, method 2026
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape)
E9/3K per 7” reel (8mm tape)
Dimensions in inches
and (millimeters)
Mounting Pad Layout
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Power Dissipation(1) @ TA
≤ 25C
Ppk
40(4)
W
Total Power Dissipation
at TA = 25°C
PD
225
mW
on FR-5 Board(2)
Derate above 25C
1.8
mW/C
Total Power Dissipation
at TA = 25°C
PD
300
mW
on Alumina Substrate(3)
Derate above 25C
2.4
mW/C
Thermal Resistance Junction to Ambient Air
R
ΘJA
556
°C/W
Operating and Storage Temperature Range
TJ, Tstg
–55 to +150
°C
Notes:
(1) Nonrepetitive current pulse per Figure 2 and derate above TA = 25°C per Figure 3.
(2) FR-5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina.
(4) The MMBZ6V8DC/A is rated at 24V
Marking:
MMBZ15VDC = TC5
MMBZ27VDC = TC7
MMBZ6V8DC = ?
MMBZ15VDA = TA5
MMBZ27VDA = TA7
MMBZ6V8DA = ?
MMBZ15VDA
MMBZ27VDA
MMBZ15VDC
MMBZ27VDC
Common Anode
Common Cathode
Top
View
相關(guān)PDF資料
PDF描述
MBRB735/31 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
MBR20H100CT 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF2050CT/45 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
MMBZ4690/E8 5.6 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MMBZ5231B/E9 5.1 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBZ15VDG 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression
MMBZ15VDL 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 12V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 12V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 12V, SOT23; Reverse Stand-Off Voltage Vrwm:12.8V; Breakdown Voltage Min:14.3V; Breakdown Voltage Max:15.8V; Clamping Voltage Vc Max:21.2V; Peak Pulse Current Ippm:1.9A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes
MMBZ15VDL,215 功能描述:ESD 抑制器 Diode TVS Dual/Singl 12.8V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C
MMBZ15VDL/DG 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression
MMBZ15VDL_08 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:40W PEAK POWER DUAL SURFACE MOUNT TVS