- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371125 > MMBZ15VDA (Vishay Intertechnology,Inc.) surface mount silicon Zener diodes PDF資料下載
參數(shù)資料
| 型號： | MMBZ15VDA |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 表面貼裝硅穩(wěn)壓二極管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 129K |
| 代理商： | MMBZ15VDA |
MOTOROLA
2
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
Max Reverse
Leakage Current
Max Zener Impedance (5)
Max
Reverse
(A)
Max Reverse
Voltage @
(V)
Maximum
Coefficient of
(mV/
C)
°
VZT(3)
(V)
@ IT
(mA)
IR @ VR
(
μ
A) (V)
ZZT @ IZT
(
) (mA)
ZZK @ IZK
(
) (mA)
Surge
Current
IRSM(4)
IRSM(4)
(Clamping
Voltage)
VRSM
Temperature
VBR
Min
Nom
Max
5.32
5.6
5.88
20
5.0
3.0
11
1600
0.25
3.0
8.0
1.26
5.89
6.2
6.51
1.0
0.5
3.0
—
—
—
2.76
8.7
2.80
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage
(V)
IR (nA)
(A)
Max Reverse
(V)
Maximum
(mV/
°
C)
VBR(3)
(V)
@ IT
(mA)
Reverse Voltage
Working Peak
VRWM
Max Reverse
Leakage Current
IRWM
Max Reverse
Surge Current
IRSM(4)
Voltage @ IRSM(4)
(Clamping Voltage)
VRSM
Temperature
Coefficient of
VBR
Min
Nom
Max
14.25
15
15.75
1.0
12.0
50
1.9
21
12.3
19.0
(3) VZ/VBR measured at pulse test current IT at an ambient temperature of 25
°
C.
(4) Surge current waveform per Figure 5 and derate per Figure 6.
(5) ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are
(5)
IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.
20
21.0
1.0
17.0
50
1.4
28
17.2
TYPICAL CHARACTERISTICS
–40
+50
18
B
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (
°
C)
+100
+150
15
12
9
6
3
0
(
–40
+25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (
°
C)
+85
+125
100
10
1
0.1
0.01
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBZ15VDC | surface mount silicon Zener diodes |
| MMBZ15VDLT1 | 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ15VDLT3 | 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ15VAL | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ20VAL | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ15VDC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Zener Diodes, Dual |
| MMBZ15VDG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ15VDL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 12V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 12V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 12V, SOT23; Reverse Stand-Off Voltage Vrwm:12.8V; Breakdown Voltage Min:14.3V; Breakdown Voltage Max:15.8V; Clamping Voltage Vc Max:21.2V; Peak Pulse Current Ippm:1.9A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ15VDL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 12.8V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ15VDL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。