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參數資料
| 型號： | MMBZ15VAL/DG |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | TVS DIODE, TO-236AB |
| 封裝： | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
| 文件頁數： | 1/15頁 |
| 文件大?。?/td> | 78K |
| 代理商： | MMBZ15VAL/DG |
1.
Product prole
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode conguration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
[1]
All types available as /DG halogen-free version.
1.2 Features
1.3 Applications
MMBZxVAL series
Double ESD protection diodes for transient overvoltage
suppression
Rev. 01 — 1 September 2008
Product data sheet
Table 1.
Product overview
Type number[1]
Package
Conguration
NXP
JEDEC
MMBZ12VAL
SOT23
TO-236AB
dual common anode
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
I Unidirectional ESD protection of
two lines
I ESD protection up to 30 kV (contact
discharge)
I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)
I Low diode capacitance: Cd ≤ 140 pF
I IEC 61643-321
I Rated peak pulse power: PPPM ≤ 40 W I AEC-Q101 qualied
I Ultra low leakage current: IRM ≤ 5nA
I Computers and peripherals
I Automotive electronic control units
I Audio and video equipment
I Portable electronics
I Cellular handsets and accessories
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PDF描述 |
|---|---|
| MMBZ20VCL/DG | TVS DIODE, TO-236AB |
| MBR30H60CTHE3/45 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB30H35CTHE3/45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB30H50CTHE3/45 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF30H60CTHE3/45 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBZ15VALT1 | 功能描述:TVS二極管陣列 15V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ15VALT1G | 功能描述:TVS二極管陣列 15V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ15VALT1G | 制造商:ON Semiconductor 功能描述:TVS Diode |
| MMBZ15VALT3 | 功能描述:TVS二極管陣列 15V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ15VALT3G | 功能描述:TVS二極管陣列 15V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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