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參數(shù)資料
| 型號： | MMBZ12VALT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236 |
| 封裝： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MMBZ12VALT3G |
MMBZ5V6ALT1 Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
40
+50
18
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (
°
C)
+100
+150
15
12
9
6
3
0
40
+25
TEMPERATURE (
°
C)
1000
Figure 2. Typical Leakage Current
versus Temperature
+85
+125
100
10
1
0.1
0.01
B
(
B
T
)
I
R
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
TEMPERATURE (
°
C)
FR5 BOARD
ALUMINA SUBSTRATE
0
1
2
3
320
280
240
160
120
40
0
C
BIAS (V)
200
80
15 V
5.6 V
P
D
,
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ12VDG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ12VDL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 8.5V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23; Reverse Stand-Off Voltage Vrwm:8.5V; Breakdown Voltage Min:11.4V; Breakdown Voltage Max:12.6V; Clamping Voltage Vc Max:17V; Peak Pulse Current Ippm:2.35A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ12VDL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 8.5V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ12VDL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ12VDL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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