參數(shù)資料
型號(hào): MMBZ12VALT1G
廠(chǎng)商: ON SEMICONDUCTOR
元件分類(lèi): 參考電壓二極管
英文描述: 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
中文描述: 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236
封裝: LEAD FREE, PLASTIC, CASE 318-08, 3 PIN
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 70K
代理商: MMBZ12VALT1G
MMBZ5V6ALT1 Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.1
1
10
100
1000
1
10
100
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is
the clamping voltage at
I
Z
(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
Figure 5. Pulse Waveform
V100
50
0
0
1
2
3
4
t, TIME (ms)
Figure 6. Pulse Derating Curve
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
PP
.
HALF VALUE
I
PP
2
t
P
t
r
10 s
PEAK VALUE I
PP
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 7. Maximum Nonrepetitive Surge
Power, P
pk
versus PW
Figure 8. Maximum Nonrepetitive Surge
Power, P
pk
(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
Power is defined as V
Z
(NOM) x I
Z
(pk) where
V
Z
(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
P
P
A
°
C
P
p
,
P
p
,
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