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參數(shù)資料
| 型號(hào)： | MMBV609LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | VHF BAND, 29 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | MMBV609LT1G |
MMBV609LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(EACH DIODE)
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
V
(BR)R
20
Vdc
Reverse Voltage Leakage Current
(V
R
= 15 Vdc)
I
R
10
nAdc
Diode Capacitance
(V
R
= 3.0 Vdc, f = 1.0 MHz)
C
T
26
32
pF
Capacitance Ratio C3/C8
(f = 1.0 MHz)
C
R
1.8
2.4
Figure of Merit
(V
R
= 3.0 Vdc, f = 50 MHz)
Q
250
450
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
50
40
30
20
10
01
40
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
C
Figure 2. Figure of Merit
f, FREQUENCY (MHz)
Figure 3. Diode Capacitance
T
A
, AMBIENT TEMPERATURE (
°
C)
Q
10
1000
100
10
100
1000
C 1.04
0.97
75
1.02
1.00
0.98
0.96
25
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
f = 1.0 MHz
T
A
= 25
°
C
V
R
= 3 Vdc
T
A
= 25
°
C
50
0
+50
+100
1.03
1.01
0.99
7
2
3
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBV609LT1G | 制造商:ON Semiconductor 功能描述:Tuning Diode |
| MMBV809 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Silicon Tuning Diode |
| MMBV809LT1 | 功能描述:變?nèi)荻O管 20V 4.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV809LT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
| MMBV809LT1G | 功能描述:變?nèi)荻O管 20V 4.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
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