參數資料
型號: MMBV609LT1
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Silicon Tuning Diode(固態(tài)調諧二極管)
中文描述: VHF BAND, 29 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB
封裝: PLASTIC, CASE 318-08, TO-236, 3 PIN
文件頁數: 2/3頁
文件大小: 45K
代理商: MMBV609LT1
MMBV609LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(EACH DIODE)
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
V
(BR)R
20
Vdc
Reverse Voltage Leakage Current
(V
R
= 15 Vdc)
I
R
10
nAdc
Diode Capacitance
(V
R
= 3.0 Vdc, f = 1.0 MHz)
C
T
26
32
pF
Capacitance Ratio C3/C8
(f = 1.0 MHz)
C
R
1.8
2.4
Figure of Merit
(V
R
= 3.0 Vdc, f = 50 MHz)
Q
250
450
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
50
40
30
20
10
01
40
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
C
Figure 2. Figure of Merit
f, FREQUENCY (MHz)
Figure 3. Diode Capacitance
T
A
, AMBIENT TEMPERATURE (
°
C)
Q
10
1000
100
10
100
1000
C 1.04
0.97
75
1.02
1.00
0.98
0.96
25
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
f = 1.0 MHz
T
A
= 25
°
C
V
R
= 3 Vdc
T
A
= 25
°
C
50
0
+50
+100
1.03
1.01
0.99
7
2
3
5
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