- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384741 > MMBV409LT1G (ON SEMICONDUCTOR) Silicon Tuning Diode PDF資料下載
參數(shù)資料
| 型號： | MMBV409LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | VHF BAND, 29 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | LEAD FREE, CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 55K |
| 代理商： | MMBV409LT1G |
MMBV409LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
V
(BR)R
20
Vdc
Reverse Voltage Leakage Current
(V
R
= 15 Vdc)
I
R
0.1
Adc
Diode Capacitance Temperature Coefficient
(V
R
= 3.0 Vdc, f = 1.0 MHz)
TC
C
300
ppm/
°
C
C
t
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 50 MHz
C
R
, Capacitance Ratio
C
3
/C
8
f = 1.0 MHz
(Note 1)
Device
Min
Nom
Max
Min
Min
Max
MMBV409LT1
26
29
32
200
1.5
1.9
1. C
R
is the ratio of C
t
measured at 3 Vdc divided by C
t
measured at 8 Vdc.
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
40
32
24
16
8
01
3
10
30
100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit
f, FREQUENCY (MHz)
Figure 3. Leakage Current
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 4. Diode Capacitance
Q
10
1000
100
10
100
1000
,
IR
100
60
60
0.01
0.006
0.001
0
+40
+100
C 1.04
0.97
75
1.02
1.00
0.98
0.96
25
T
A
, AMBIENT TEMPERATURE (
°
C)
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
f = 1.0 MHz
T
A
= 25
°
C
V
R
= 3 Vdc
T
A
= 25
°
C
V
R
= 15 Vdc
+120 +140
+80
+60
+20
40
20
0.1
0.06
1.0
0.6
10
6.0
20
2.0
0.2
0.02
0.002
50
0
+50
+100
1.03
1.01
0.99
C
2
20
相關PDF資料 |
PDF描述 |
|---|---|
| MMBV432LT1G | Silicon Tuning Diode |
| MMBV609LT1G | Silicon Tuning Diode |
| MMBV809LT1G | Silicon Tuning Diode |
| MMBV809LT3 | Silicon Tuning Diode |
| MMBV809LT3G | Silicon Tuning Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBV432 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Tuning Diode |
| MMBV432LT1 | 功能描述:變容二極管 14V 43pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV432LT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
| MMBV432LT1G | 功能描述:變容二極管 14V 43pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV609 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Tuning Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復。