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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
http://onsemi.com
2
C
T
, Diode Capacitance
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
V
R
= 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Device
Marking
Package
Shipping
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1
M4G
SOT23
3,000 / Tape & Reel
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2101LT1G
M4G
SOT23
(PbFree)
3,000 / Tape & Reel
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2101L
M4G
SOT23
Bulk (Note 1)
6.1
6.8
7.5
450
2.5
2.7
3.2
MV2101
MV2101
TO92
1,000 per Box
6.1
6.8
7.5
450
2.5
2.7
3.2
MV2101G
MV2101
TO92
(PbFree)
1,000 per Box
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2103LT1
4H
SOT23
3,000 / Tape & Reel
9.0
10
11
400
2.5
2.9
3.2
MMBV2105LT1
4U
SOT23
3,000 / Tape & Reel
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2105LT1G
4U
SOT23
(PbFree)
3,000 / Tape & Reel
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2105L
4U
SOT23
Bulk (Note 1)
13.5
15
16.5
400
2.5
2.9
3.2
MV2105
MV2105
TO92
1,000 per Box
13.5
15
16.5
400
2.5
2.9
3.2
MV2105G
MV2105
TO92
(PbFree)
1,000 per Box
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2107LT1
4W
SOT23
3,000 / Tape & Reel
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2107LT1G
4W
SOT23
(PbFree)
3,000 / Tape & Reel
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2107L
4W
SOT23
Bulk (Note 1)
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2108LT1
4X
SOT23
3,000 / Tape & Reel
24.3
27
29.7
300
2.5
3.0
3.2
MMBV2108LT1G
4X
SOT23
(PbFree)
3,000 / Tape & Reel
24.3
27
29.7
300
2.5
3.0
3.2
LV2209
LV2209
TO92
1,000 per Box
29.7
33
36.3
200
2.5
3.0
3.2
MMBV2109LT1
4J
SOT23
3,000 / Tape & Reel
29.7
33
36.3
200
2.5
3.0
3.2
MMBV2109LT1G
4J
SOT23
(PbFree)
3,000 / Tape & Reel
29.7
33
36.3
200
2.5
3.0
3.2
MMBV2109L
4J
SOT23
Bulk (Note 1)
29.7
33
36.3
200
2.5
3.0
3.2
MV2109
MV2109
TO92
1,000 per Box
29.7
33
36.3
200
2.5
3.0
3.2
MV2109G
MV2109
TO92
(PbFree)
1,000 per Box
29.7
33
36.3
200
2.5
3.0
3.2
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
1.
MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1,
are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
2. TR, TUNING RATIO
TR is the ratio of C
T
measured at 2.0 Vdc divided by C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an admittance
bridge at the specified frequency and substituting in the
following equations:
2 fC
G
Q
(Boonton Electronics Model 33AS8 or equivalent). Use Lead
Length
1/16
″
.
4. TC
C
, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TC
C
is guaranteed by comparing C
T
at V
R
= 4.0 Vdc, f = 1.0
MHz, T
A
= 65
°
C with C
T
at V
R
= 4.0 Vdc, f = 1.0 MHz, T
A
= +85
°
C in the following equation, which defines TC
C
:
TCC
CT(
85
°
C) – CT(–65
°
C)
85
65
·
106
CT(25
°
C)
Accuracy limited by measurement of C
T
to
±
0.1 pF.