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參數(shù)資料
| 型號： | MMBV105GLT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | UHF BAND, 2.15 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 54K |
| 代理商： | MMBV105GLT1G |
MMBV105GLT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
V
(BR)R
30
Vdc
Reverse Voltage Leakage Current
(V
R
= 28 Vdc)
I
R
50
nAdc
Device Type
C
T
V
R
= 25 Vdc, f = 1.0 MHz
pF
Q
V
R
= 3.0 Vdc
f = 50 MHz
C
R
C
3
/C
25
f = 1.0 MHz
Min
Max
Typ
Min
Max
MMBV105GLT1
1.5
2.8
250
4.0
6.5
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
20
16
12
8.0
4.0
00.3
1.0
10
20 30
V
R
, REVERSE VOLTAGE (VOLTS)
C
Figure 2. Figure of Merit
f, FREQUENCY (MHz)
Figure 3. Diode Capacitance
T
A
, AMBIENT TEMPERATURE (
°
C)
Q
10
1000
100
10
100
1000
C 1.04
0.97
75
1.02
1.00
0.98
0.96
25
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
18
14
10
6.0
2.0
f = 1.0 MHz
T
A
= 25
°
C
V
R
= 3 Vdc
T
A
= 25
°
C
50
0
+50
+100
1.03
1.01
0.99
0.5
2.0 3.0
5.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBV105GLT1G-CUT TAPE | 制造商:ON 功能描述:MMBV105 Series 225 mW 30 V 2.8 pF Silicon Tuning Diode - SOT-23-3 |
| MMBV109 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Epicap Diode |
| MMBV109L | 制造商:Motorola Inc 功能描述:Varactor Diode, Single, 29pf C(t), Sot-23 |
| MMBV109LT1 | 功能描述:變?nèi)荻O管 30V 26pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV109LT1G | 功能描述:變?nèi)荻O管 30V 26pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
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