- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95976 > MMBTH10-13 (DIODES INC) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MMBTH10-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 73K |
| 代理商： | MMBTH10-13 |
DS31031 Rev. 7 - 2
1 of 3
MMBTH10
www.diodes.com
Diodes Incorporated
MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
High Current Gain Bandwidth Product
Ideal for Mixer and RF Amplifier Applications with collector
currents in the 100
mA - 30 mA Range
Available in Lead Free/RoHS Compliant Version (Note 3)
Characteristic
Symbol
MMBTH10
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current - Continuous (Note 1)
IC
50
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Marking (See Page 2): K3H, K3Y
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2.
Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
V
IC = 1mA IB = 0
Collector-Base Breakdown Voltage
V(BR)CBO
30
V
IC = 100
mA, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
3.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 25V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 2V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
60
IC = 4mA, VCE = 10.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 4mA, IB = 400
mA
Base-Emitter On Voltage
VBE(SAT)
0.95
V
IC = 4mA, VCE = 10.0V
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
650
MHz
VCE = 10V, f = 100MHz, IC = 4mA
Collector-Base Capacitance
CCB
0.7
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Feedback Capacitance
CRB
0.65
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Time Constant
Rb’Cc
9ps
VCB = 10V, f = 31.8MHz, IC = 4mA
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
E
B
C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
SPICE MODEL: MMBTH10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBTH10L-B-AL3-R | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MMBTH10G-C-AN3-R | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MMBTH10G-C-AE3-R | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MMBTH10G-B-AL3-R | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MMBTH10-C-AE3-R | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTH10-4LT1 | 功能描述:兩極晶體管 - BJT 25V VHF Mixer NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTH10-4LT1G | 功能描述:兩極晶體管 - BJT 25V VHF Mixer NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTH10-7 | 功能描述:兩極晶體管 - BJT 25V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTH10-7-F | 功能描述:兩極晶體管 - BJT 25V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTH10LT1 | 功能描述:兩極晶體管 - BJT 25V VHF Mixer NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。