- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98025 > MMBTA63LT3 (ON SEMICONDUCTOR) 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PDF資料下載
參數(shù)資料
| 型號： | MMBTA63LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 328K |
| 代理商： | MMBTA63LT3 |
2–410
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Darlington Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCES
–30
Vdc
Collector – Base Voltage
VCBO
–30
Vdc
Emitter – Base Voltage
VEBO
–10
Vdc
Collector Current — Continuous
IC
–500
mAdc
DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 Adc)
V(BR)CEO
–30
—
Vdc
Collector Cutoff Current (VCB = –30 Vdc)
ICBO
—
–100
nAdc
Emitter Cutoff Current (VEB = –10 Vdc)
IEBO
—
–100
nAdc
ON CHARACTERISTICS
DC Current Gain(3)
(IC = –10 mAdc, VCE = –5.0 Vdc)
MMBTA63
(IC = –10 mAdc, VCE = –5.0 Vdc)
MMBTA64
(IC = –100 mAdc, VCE = –5.0 Vdc)
MMBTA63
(IC = –100 mAdc, VCE = –5.0 Vdc)
MMBTA64
hFE
5,000
10,000
20,000
—
Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc)
VCE(sat)
—
–1.5
Vdc
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)
VBE(on)
—
–2.0
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
125
—
MHz
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTA63LT1
MMBTA64LT1
*Motorola Preferred Device
*
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
COLLECTOR 3
BASE
1
EMITTER 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBTA64LT3 | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA70LT3 | 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA93LT3 | 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTH24LT1 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTH24LT3 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA64 | 功能描述:達林頓晶體管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA64_Q | 功能描述:達林頓晶體管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA64-7 | 功能描述:達林頓晶體管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA64-7-F | 功能描述:達林頓晶體管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA64LT1 | 功能描述:達林頓晶體管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。