• 參數(shù)資料
    型號: MMBTA63LT3
    廠商: ON SEMICONDUCTOR
    元件分類: 小信號晶體管
    英文描述: 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
    封裝: PLASTIC, CASE 318-08, 3 PIN
    文件頁數(shù): 1/22頁
    文件大?。?/td> 328K
    代理商: MMBTA63LT3
    2–410
    Motorola Small–Signal Transistors, FETs and Diodes Device Data
    Darlington Transistors
    PNP Silicon
    MAXIMUM RATINGS
    Rating
    Symbol
    Value
    Unit
    Collector – Emitter Voltage
    VCES
    –30
    Vdc
    Collector – Base Voltage
    VCBO
    –30
    Vdc
    Emitter – Base Voltage
    VEBO
    –10
    Vdc
    Collector Current — Continuous
    IC
    –500
    mAdc
    DEVICE MARKING
    MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
    THERMAL CHARACTERISTICS
    Characteristic
    Symbol
    Max
    Unit
    Total Device Dissipation FR–5 Board,(1)
    TA = 25°C
    Derate above 25
    °C
    PD
    225
    1.8
    mW
    mW/
    °C
    Thermal Resistance, Junction to Ambient
    RqJA
    556
    °C/W
    Total Device Dissipation
    Alumina Substrate,(2) TA = 25°C
    Derate above 25
    °C
    PD
    300
    2.4
    mW
    mW/
    °C
    Thermal Resistance, Junction to Ambient
    RqJA
    417
    °C/W
    Junction and Storage Temperature
    TJ, Tstg
    –55 to +150
    °C
    ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
    Characteristic
    Symbol
    Min
    Max
    Unit
    OFF CHARACTERISTICS
    Collector – Emitter Breakdown Voltage (IC = –100 Adc)
    V(BR)CEO
    –30
    Vdc
    Collector Cutoff Current (VCB = –30 Vdc)
    ICBO
    –100
    nAdc
    Emitter Cutoff Current (VEB = –10 Vdc)
    IEBO
    –100
    nAdc
    ON CHARACTERISTICS
    DC Current Gain(3)
    (IC = –10 mAdc, VCE = –5.0 Vdc)
    MMBTA63
    (IC = –10 mAdc, VCE = –5.0 Vdc)
    MMBTA64
    (IC = –100 mAdc, VCE = –5.0 Vdc)
    MMBTA63
    (IC = –100 mAdc, VCE = –5.0 Vdc)
    MMBTA64
    hFE
    5,000
    10,000
    20,000
    Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc)
    VCE(sat)
    –1.5
    Vdc
    Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)
    VBE(on)
    –2.0
    Vdc
    SMALL– SIGNAL CHARACTERISTICS
    Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
    fT
    125
    MHz
    1. FR–5 = 1.0 x 0.75 x 0.062 in.
    2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
    3. Pulse Test: Pulse Width
    ≤ 300 s, Duty Cycle ≤ 2.0%.
    Preferred devices are Motorola recommended choices for future use and best overall value.
    MOTOROLA
    SEMICONDUCTOR TECHNICAL DATA
    MMBTA63LT1
    MMBTA64LT1
    *Motorola Preferred Device
    *
    1
    2
    3
    CASE 318 – 08, STYLE 6
    SOT– 23 (TO – 236AB)
    COLLECTOR 3
    BASE
    1
    EMITTER 2
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