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參數(shù)資料
| 型號： | MMBTA28D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 870K |
| 代理商： | MMBTA28D87Z |
MPSA28/MMBTA28/PZTA28, Rev A
NPN Darlington Transistor
MMBTA28
MPSA28
PZTA28
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current - Continuous
800
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA28
*MMBTA28
**PZTA28
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03.
C
B
E
TO-92
C
B
E
SuperSOT-3
Mark: 3SS
B
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
2001 Fairchild Semiconductor International
MPSA28
/
MMBT
A28
/
PZT
A28
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