參數(shù)資料
型號： MMBT4403T
廠商： Diodes Inc.
英文描述： 12V, CMOS, Rail-to-Rail I/O, Operational Amplifier 14-SOIC
中文描述： 進步黨小信號晶體管表面貼裝
文件頁數(shù)： 2/2頁
文件大小： 49K
代理商： MMBT4403T
DS30273 Rev. 2 - 2
2 of 2
MMBT4403T
T
C
U
D
O
R
P
W
E
N
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
-40
-40
-5.0
V
V
V
nA
nA
I
C
= -100 A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -100 A, I
C
= 0
V
CE
= -35V, V
EB(OFF)
= -0.4V
V
CE
= -35V, V
EB(OFF)
= -0.4V
-100
-100
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
30
60
100
100
20
300
I
C
= -100μA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -150mA, V
CE
= -2.0V
I
C
= -500mA, V
CE
= -2.0V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.40
-0.75
-0.95
-1.30
V
Base- Emitter Saturation Voltage
V
BE(SAT)
-0.75
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
8.5
30
15
8.0
500
100
pF
pF
k
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
1.5
0.1
60
1.0
V
= -10V, I
C
= -1.0mA,
f = 1.0kHz
x 10
-4
S
Current Gain-Bandwidth Product
f
T
200
MHz
V
= -10V, I
C
= -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
15
20
225
30
ns
ns
ns
ns
V
CC
= -30V, I
= -150mA,
V
BE(off)
= -2.0V, I
B1
= -15mA
V
CC
= -30V, I
= -150mA,
I
B1
= I
B2
= -15mA
Note:
2. Short duration pulse test used to minimize self-heating effect.
Device
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相關代理商/技術參數(shù)
參數(shù)描述
MMBT4403-T 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4403T1 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, PNP Type, TO-236AB 制造商:ON Semiconductor 功能描述:
MMBT4403T-7 功能描述:兩極晶體管 - BJT -40V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4403T-7-F 功能描述:兩極晶體管 - BJT -40V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4403-TP 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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