參數(shù)資料
型號(hào)： MMBT4401T-7
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/3頁
文件大?。?/td> 58K
代理商： MMBT4401T-7
DS30272 Rev. 2 - 2
2 of 3
MMBT4401T
T
C
U
D
O
R
P
W
E
N
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
60
40
6.0
V
V
V
nA
nA
I
C
= 100 A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100 A, I
C
= 0
V
CE
= 35V, V
EB(OFF)
= 0.4V
V
CE
= 35V, V
EB(OFF)
= 0.4V
100
100
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
20
40
80
100
40
300
I
C
= 100μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.40
0.75
0.95
1.2
V
Base- Emitter Saturation Voltage
V
BE(SAT)
0.75
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
6.5
30
15
8.0
500
30
pF
pF
k
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
1.0
0.1
40
1.0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
x 10
-4
S
Current Gain-Bandwidth Product
f
T
250
MHz
V
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
15
20
225
30
ns
ns
ns
ns
V
CC
= 30V, I
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
V
CC
= 30V, I
= 150mA,
I
B1
= I
B2
= 15mA
Notes:
2. Short duration pulse test used to minimize self-heating effect.
Device
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