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參數(shù)資料
| 型號： | MMBT4258D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 739K |
| 代理商： | MMBT4258D87Z |
PN4258
/
MMBT4258
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS*
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CES
Collector-Emitter Breakdown Voltage*
IC = 100
A, V
BE = 0
12
V
VCEO(sus)
Collector-Emitter Sustaining Voltage*
IC = 3.0 mA, IB = 0
12
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
12
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
4.5
V
ICES
Collector Cutoff Current
VCE = 6.0 V, VBE = 0
VCE = 6.0 V, VBE = 0, TA = 65
°C
0.01
5.0
A
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
IC = 10 mA, VCE = 10 V,
f = 100 MHz
700
MHz
Cibo
Input Capacitance
VBE = 0.5 V, IC = 0,
f = 1.0 MHz
3.5
pF
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
3.0
pF
SWITCHING CHARACTERISTICS
ton
Turn-On Time
VCC = 1.5 V, VBE(off) = 0 V,
15
ns
td
Delay Time
IC = 10 mA, IB1 = 1.0 mA
10
ns
tr
Rise Time
15
ns
toff
Turn-Off Time
VCC = 1.5 V, IC = 10mA
20
ns
ts
Storage Time
IB1 = IB2 = 1.0 mA
20
ns
tf
Fall Time
10
ns
ts
Storage Time
IC = 10 mA, IB1 = IB2 = 10 mA
20
ns
hFE
DC Current Gain
IC = 1.0 mA, VCE = 0.5 V
IC = 10 mA, VCE = 3.0 V
IC = 50 mA, VCE = 1.0 V
15
30
120
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.15
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.75
0.95
1.5
V
PNP Switching Transistor
(continued)
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=545.6E-18 Xti=3 Eg=1.11 Vaf=100 Bf=61.42 Ne=1.5 Ise=0 Ikf=50m Xtb=1.5 Br=1.426 Nc=2 Isc=0 Ikr=0
Rc=3.75 Cjc=2.77p Mjc=.1416 Vjc=.75 Fc=.5 Cje=2.65p Mje=.3083 Vje=.75 Tr=4.109n Tf=118.5p Itf=.5 Vtf=3
Xtf=6 Rb=10)
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