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參數(shù)資料
| 型號： | MMBT4126LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Transistor PNP Silicon |
| 中文描述： | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 100K |
| 代理商： | MMBT4126LT1 |
MMBT4126LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 3.)
(I
C
= –1.0 mAdc, I
B
= 0)
V
(BR)CEO
–25
–
Vdc
Collector–Base Breakdown Voltage
(I
C
= –10 Adc, I
E
= 0)
V
(BR)CBO
–25
–
Vdc
Emitter–Base Breakdown Voltage
(I
E
= –10 Adc, I
C
= 0)
V
(BR)EBO
–4
–
Vdc
Collector Cutoff Current
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc)
I
CEX
–
–50
nAdc
ON CHARACTERISTICS
(Note 3.)
DC Current Gain
(I
C
= –2.0 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –50 mAdc, V
CE
= –1.0 Vdc)
H
FE
120
60
300
–
–
Collector–Emitter Saturation Voltage
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
V
CE(sat)
–
–0.4
Vdc
Base–Emitter Saturation Voltage
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
V
BE(sat)
–
–0.95
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(I
C
= –10 mAdc, V
CE
= –20 Vdc, f = 100 MHz)
f
T
250
–
MHz
Output Capacitance
(V
CB
= –5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
–
4.5
pF
Input Capacitance
(V
EB
= –0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
–
10
pF
Small–Signal Current Gain
(I
C
= –2.0 mAdc, V
CE
= –10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
h
fe
120
2.5
480
–
–
Noise Figure
(I
C
= –100 Adc, V
CE
= –5.0 Vdc, R
S
= 1.0 k
, f = 1.0 kHz)
3. Pulse Test: Pulse Width
300 s, Duty Cycle
NF
–
4.0
dB
2.0%.
TYPICAL TRANSIENT CHARACTERISTICS
Figure 1. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q
3000
2000
1000
700
500
300
200
100
70
50
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
C
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25
°
C
T
J
= 125
°
C
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