參數(shù)資料
型號: MMBT3906D87Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/16頁
文件大小: 879K
代理商: MMBT3906D87Z
C
B
E
TO-92
C
B
E
B
C
SOT-223
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10
A to 100 mA.
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3906
*MMBT3906
**PZT3906
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
2N3906
MMBT3906
SOT-23
Mark: 2A
PZT3906
2N3906
/
MMBT3906
/
PZT3906
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N3906/MMBT3906/PZT3906, Rev A
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