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參數(shù)資料
| 型號(hào)： | MMBT3904K |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Epitaxial Silicon Transistor, General Purpose Transistor |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | MMBT3904K |
2005 Fairchild Semiconductor Corporation
MMBT3904K Rev. A
1
www.fairchildsemi.com
M
February 2005
MMBT3904K
NPN Epitaxial Silicon Transistor
General Purpose Transistor
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
60
V
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6
V
Collector Current
200
mA
Collector Power Dissipation
350
mW
Storage Temperature
150
°
C
Test Condition
Min.
Max.
Units
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Collector-Base Breakdown Voltage
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30V, V
EB
= 3V
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 100mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CE
= 20V, I
C
= 10mA, f = 100MHz
I
C
= 100
μ
A, V
CE
= 5V, R
S
= 1K
f = 10Hz to 15.7KHz
60
V
Collector-Emitter Breakdown Voltage *
40
V
Emitter-Base Breakdown Voltage
6
V
Collector Cut-off Current
50
nA
DC Current Gain *
40
70
100
60
30
300
V
CE
(sat)
Collector-Emitter Saturation Voltage *
0.2
0.3
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage *
0.65
0.85
0.95
V
V
C
ob
f
T
NF
Output Capacitance
4
pF
Current Gain-Bandwidth Product
300
MHz
Noise Figure
5
dB
t
ON
Turn On Time
V
CC
= 3V, V
BE
= 0.5V
I
C
= 10mA, I
B1
= 1mA
V
CC
= 3V, I
C
= 10mA, I
B1
= I
B2
= 1mA
70
ns
t
OFF
Turn Off Time
250
ns
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
1AK
Marking
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