參數(shù)資料
型號(hào)： MMBT2369ALT3G
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： PLASTIC, CASE 318-08, 3 PIN
文件頁(yè)數(shù)： 12/25頁(yè)
文件大?。?/td> 416K
代理商： MMBT2369ALT3G
MMBT2369LT1 MMBT2369ALT1
2–309
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain (3)
(IC = 10 mAdc, VCE = 1.0 Vdc)
MMBT2369
(IC = 10 mAdc, VCE = 1.0 Vdc)
MMBT2369A
(IC = 10 mAdc, VCE = 0.35 Vdc)
MMBT2369A
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C)
MMBT2369A
(IC = 30 mAdc, VCE = 0.4 Vdc)
MMBT2369A
(IC = 100 mAdc, VCE = 2.0 Vdc)
MMBT2369
(IC = 100 mAdc, VCE = 1.0 Vdc)
MMBT2369A
hFE
40
—
40
20
30
20
—
120
—
Collector – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369
(IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
MMBT2369A
(IC = 30 mAdc, IB = 3.0 mAdc)
MMBT2369A
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369A
VCE(sat)
—
0.25
0.20
0.30
0.25
0.50
Vdc
Base – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C)
MMBT2369A
(IC = 30 mAdc, IB = 3.0 mAdc)
MMBT2369A
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369A
VBE(sat)
0.7
—
0.85
1.02
1.15
1.60
Vdc
SMALL– SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
4.0
pF
Small Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
hfe
5.0
—
SWITCHING CHARACTERISTICS
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
ts
—
5.0
13
ns
Turn–On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
—
8.0
12
ns
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
—
10
18
ns
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2369-G 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS
MMBT2369L 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Switcing Transistors
MMBT2369LT1 功能描述:兩極晶體管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2369LT1_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Switching Transistors NPN Silicon
MMBT2369LT1G 功能描述:兩極晶體管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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