參數(shù)資料
型號(hào): MMBT2222LT1G
廠商: ON SEMICONDUCTOR
元件分類(lèi): 功率晶體管
英文描述: General Purpose Transistors
中文描述: 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 253K
代理商: MMBT2222LT1G
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
D
J
K
L
A
C
B S
H
G
V
3
1
2
CASE 318–08
SOT–23 (TO–236AB)
ISSUE AE
STYLE 6:
PIN 1.
BASE
EMITTER
COLLECTOR
2.
3.
DIM
A
B
C
D
G
H
J
K
L
S
V
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0180
0.0350
0.0830
0.0177
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0236
0.0401
0.0984
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
MILLIMETERS
INCHES
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
相關(guān)PDF資料
PDF描述
MMBT2222LT3 General Purpose Transistors
MMBT2222L General Purpose Transistors
MMBT2222AWT1 General Purpose Transistor
MMBT2222LT1 General Purpose Transistors
MMBT2222AK NPN Epitaxial Silicon Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2222LT1G 制造商:ON Semiconductor 功能描述:TRANSISTOR BJT NPN 30V 0.6A SOT-23 制造商:ON Semiconductor 功能描述:TRANSISTOR, BJT, NPN, 30V, 0.6A, SOT-23 制造商:ON Semiconductor 功能描述:TRANSISTOR, BJT, NPN, 30V, 0.6A, SOT-23, Transistor Polarity:NPN, Collector Emit 制造商:ON Semiconductor 功能描述:TRANSISTOR, BJT, NPN, 30V, 0.6A, SOT-23, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:30V, Transition Frequency ft:250MHz, Power Dissipation Pd:225mW, DC Collector Current:600mA, DC Current Gain hFE:250, Operating , RoHS Compliant: Yes
MMBT2222LT1G_09 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:General Purpose Transistors
MMBT2222LT1G-CUT TAPE 制造商:ON 功能描述:MMBT Series 30 V 600 mA SMT NPN Silicon General Purpose Transistor - SOT-23
MMBT2222LT3 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222LT3G 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2