參數(shù)資料
型號(hào)： MMBT2222AWT3
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： SC-70, 3 PIN
文件頁(yè)數(shù)： 1/22頁(yè)
文件大小： 302K
代理商： MMBT2222AWT3
2–301
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Preliminary Information
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier applica-
tions. They are housed in the SOT–323/SC–70 package which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
75
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board
TA = 25°C
PD
150
mW
Thermal Resistance Junction to Ambient
RqJA
833
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
DEVICE MARKING
MMBT2222AWT1 = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
75
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
IBL
—
20
nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ICEX
—
10
nAdc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBT2222AWT1
Motorola Preferred Device
1
2
3
CASE 419 – 02, STYLE 3
SOT– 323/SC – 70
COLLECTOR
3
1
BASE
2
EMITTER
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2222AWT3G 功能描述:兩極晶體管 - BJT SS SC70 GP XSTR NPN 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222FW 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor
MMBT2222L 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors
MMBT2222LT1 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222LT1/D 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon
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