參數(shù)資料
型號(hào)： MMBT2222AK
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： NPN Epitaxial Silicon Transistor
中文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： SOT-23, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 253K
代理商： MMBT2222AK
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55
°
C)
(IC = 150 mAdc, VCE = 10 Vdc) (3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (3)
(IC = 500 mAdc, VCE = 10 Vdc) (3)
MMBT2222A only
MMBT2222
MMBT2222A
hFE
35
50
75
35
100
50
30
40
—
—
—
—
300
—
—
—
—
Collector–Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
VCE(sat)
—
—
—
—
0.4
0.3
1.6
1.0
Vdc
Base–Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
VBE(sat)
—
0.6
—
—
1.3
1.2
2.6
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
MMBT2222
MMBT2222A
fT
250
300
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT2222
MMBT2222A
Cibo
—
—
30
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
hie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
hre
—
—
8.0
4.0
X 10–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
hfe
50
75
300
375
—
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
hoe
5.0
25
35
200
mhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
rb, Cc
—
150
ps
Noise Figure
(IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k
, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (MMBT2222A only)
MMBT2222A
NF
—
4.0
dB
Delay Time
IC = 150 mAdc, IB1 = 15 mAdc)
td
tr
ts
tf
—
10
ns
Rise Time
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc,
—
25
Storage Time
IB1 = IB2 = 15 mAdc)
—
225
ns
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
—
60
3. Pulse Test: Pulse Width
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
300 s, Duty Cycle
2.0%.
相關(guān)PDF資料
PDF描述
MMBT2222 Surface mount Si-Epitaxial PlanarTransistors
MMBT2222A Surface mount Si-Epitaxial PlanarTransistors
MMBT2222ALT1 General Purpose Transistors(NPN Silicon)
MMBT2222AWT1 Preliminary Information General Purpose Transistors
MMBT2222LT1 General Purpose Transistors(NPN Silicon)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2222AK 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor
MMBT2222AL-AE3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
MMBT2222AL-AL3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
MMBT2222AL-AN3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
MMBT2222ALP4-7B 功能描述:MOSFET General Purpose Tran X2-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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