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參數(shù)資料
| 型號： | MMBT123S |
| 廠商： | Diodes Inc. |
| 英文描述： | 1A NPN SURFACE MOUNT TRANSISTOR |
| 中文描述： | 第1A npn型表面貼裝晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 55K |
| 代理商： | MMBT123S |
DS30292 Rev. 3 - 2
2 of 3
MMBT123S
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
45
18
5
V
V
V
A
A
I
C
= 100 A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100 A, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
1
1
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
h
FE
150
800
0.5
I
C
= 100mA, V
CE
= 1V
I
C
= 300mA, I
B
= 30mA
V
CE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
= 10V, I
E
= 50mA,
f = 100MHz
Current Gain-Bandwidth Product
f
T
100
MHz
T
C
U
D
O
R
P
W
E
N
Notes: 2.
3.
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.Device
MMBT123S-7
Packaging
SOT-23
Shipping
3000/Tape & Reel
Ordering Information
(Note 3)
K6D = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K6D
Y
Marking Information
Date Code Key
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Year
Code
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT123S_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:1A NPN SURFACE MOUNT TRANSISTOR |
| MMBT123S_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:1A NPN SURFACE MOUNT TRANSISTOR |
| MMBT123S-7 | 功能描述:兩極晶體管 - BJT 18V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT123S-7-F | 功能描述:兩極晶體管 - BJT 18V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT1616 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
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