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參數(shù)資料
| 型號： | MMBR941LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Low Noise, High-Frequency Transistors |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 309K |
| 代理商： | MMBR941LT1 |
2–3
MMBR941 MRF947 MRF9411 SERIES
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MRF9411LT1
MMBR941LT1, T3
MRF947 Series
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Insertion Gain
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
|S21|2
—
—
16
10
—
—
—
—
14
8.0
—
—
—
—
14
10.8
—
—
dB
Maximum Unilateral Gain (1)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
GU max
—
—
18
12
—
—
—
—
16
10
—
—
—
—
14.8
11.6
—
—
dB
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
NFMIN
—
—
1.5
2.1
—
—
—
—
1.5
2.1
—
—
—
—
1.5
2.1
—
—
dB
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
GNF
—
—
15
9.5
—
—
—
—
14
8.5
—
—
—
—
14
10
—
—
dB
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GUmax =
NF50
—
1.9
2.8
—
1.9
2.8
—
1.9
2.8
dB
|
Figure 1. Collector–Base Capacitance
versus Voltage
Figure 2. DC Current Gain versus
Collector Current
Figure 3. Gain Bandwidth Product versus
Collector Current
Figure 4. Insertion Gain versus Collector Current
TYPICAL CHARACTERISTICS
MMBR941LT1, T3; MMBR941BLT1; MRF9411LT1; MRF9411BLT1
IC, COLLECTOR CURRENT (mA)
VCE = 6 V
f = 1 GHz
24
20
16
12
8
4
0
1
2
3
5
10
7
20
100
70
50
30
VCE = 6 V
VCE = 6 V
f = 1 GHz
IC, COLLECTOR CURRENT (mA)
12
10
8
6
4
2
0
1
2
3
5
10
7
20
100
70
50
30
IC, COLLECTOR CURRENT (mA)
200
100
70
50
30
20
10
1
2
3
5
10
7
20
100
70
50
30
300
1
2
VCB, REVERSE VOLTAGE (V)
3
5
7
10
1
0.7
0.5
0.1
0.2
0.3
MRF9411LT1
f
h
C
MMBR941LT1, T3
f = 1 MHz
|S21|2
(1–|S11|2)(1–|S22|2)
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