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參數(shù)資料
| 型號(hào)： | MMBR901P |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 358K |
| 代理商： | MMBR901P |
Description
High Current-Gain – Bandwidth Products
Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ)
High Power Gain – Gpe(matched)=12.0dB (Typ) @ f=1.0GHz
Operating & Storage Temperature: -55
°C to +150°C
Marking Code: 7A
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
2.0
Vdc
Collector Current - Continuous
IC
30
mAdc
Thermal Resistance, Junction to Case
250
oC/W
Power Dissipation @ TC=75
oC (1)
Derate above 75
oC
PD(max)
0.300
4.0
Watt
mW/
oC
Electrical Characteristics @ 25oC Unless Otherwise Noted
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0mAdc, IB = 0)
V(BR)CEO
15
Vdc
Collector-Base Breakdow n Voltage
(IC = 0.1mAdc, IE = 0)
V(BR)CBO
25
Vdc
Emitter-Base Breakdown Voltage
(IE = 0.1mAdc, IC = 0)
V(BR)EBO
2.0
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
50
NAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 5.0 Vdc)
hFE
50
200
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB =10Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
Cobo
1.0
pF
Common-Emitter Amplifier Gain
(VCC =6.0Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
Gpe
12
dB
MMBR901
High-Frequency
Transistor
NPN Silicon
Note:
1. Case temperature measured on collector lead
immediately adjacent to body of package
RqJC
Suggested Solder
Pad Layout
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
K
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Revision: 2
2003/04/30
omponents
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Street Chatsworth
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