參數(shù)資料
型號： MMBR4957LT3
廠商： MOTOROLA INC
元件分類： 小信號晶體管
英文描述： PNP Silicon High-Frequency Transistor
中文描述： UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR
封裝： CASE 318-07, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 66K
代理商： MMBR4957LT3
1
MMBR4957LT1, T3
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
#$ !!"
. . . designed for high–gain, low–noise amplifier oscillator and mixer applica-
tions. Specifically packaged for thick and thin–film circuits using surface mount
components.
High Gain — Gpe = 17 dB Typ @ f = 450 MHz
Low Noise — NF = 3.0 dB Typ @ f = 450 MHz
Available in tape and reel packaging options by adding suffix:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
–30
Vdc
Collector–Base Voltage
–30
Vdc
Emitter–Base Voltage
–3.0
Vdc
Collector Current — Continuous
–30
mAdc
Maximum Junction Temperature
150
°
C
Power Dissipation, Tcase = 75
°
C*
Derate linearly above Tcase = 75
°
C @
THERMAL CHARACTERISTICS
0.278
3.70
W
mW/
°
C
Characteristic
Symbol
Max
Unit
Storage Temperature
Tstg
R
θ
JC
–55 to +150
°
C
Thermal Resistance Junction to Case*
270
°
C/W
* Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
DEVICE MARKING
MMBR4957LT1, T3 = 7F
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –100
μ
Adc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –100
μ
Adc, IC = 0)
Collector Cutoff Current (VCB = –10 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
–30
—
—
Vdc
–30
—
—
Vdc
–3.0
—
—
Vdc
μ
Adc
—
—
–0.1
DC Current Gain (IC = –2.0 mAdc, VCE = –10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
20
—
150
—
Current–Gain — Bandwidth Product
(IE = –2.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Common–Emitter Amplifier Power Gain
(VCE = –10 Vdc, IC = –2.0 mAdc, f = 450 MHz)
Noise Figure (IC = –2.0 mAdc, VCE = –10 Vdc, f = 450 MHz)
fT
—
1200
—
MHz
Ccb
—
—
0.8
pF
Gpe
—
17
—
dB
NF
—
3.0
—
dB
Order this document
by MMBR4957LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = –30 mA
HIGH–FREQUENCY
TRANSISTOR
PNP SILICON
CASE 318–07, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
REV 6
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