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參數(shù)資料
| 型號(hào)： | MMBF4392L |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | JFET Switching Transistors |
| 中文描述： | 結(jié)型場(chǎng)效應(yīng)管開(kāi)關(guān)晶體管 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 139K |
| 代理商： | MMBF4392L |
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 10. Effect of IDSS on Drain–Source
Resistance and Gate–Source Voltage
IDSS, ZERO–GATE VOLTAGE DRAIN CURRENT (mA)
,
D
r
20
10
0
30
40
50
30 40 50 60 70
20
R
10
0
1.0
2.0
3.0
4.0
5.0
,
G
V
(
Tchannel = 25
°
C
VGS(off)
rDS(on) @ VGS = 0
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero–Gate–Voltage Drain Current (IDSS) is the principle determi-
nant of other J–FET characteristics. Figure 10 shows the relationship
of Gate–Source Off Voltage (VGS(off)) and Drain–Source On Resis-
tance (rDS(on)) to IDSS. Most of the devices will be within
±
10% of the
values shown in Figure 10. This data will be useful in predicting the
characteristic variations for a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an MMBF4392
has an IDSS range of 25 to 75 mA. Figure 10 shows rDS(on) = 52
Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corre-
sponding VGS values are 2.2 volts and 4.8 volts.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBF4392LT1 | JFET Switching Transistors |
| MMBF4392L | RKZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 05V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; Custom Solutions Available; 3kVDC & 4kVDC Isolation Options; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Efficiency to 84% |
| MMBF4392LT1 | JFET Switching Transistors |
| MMBF4391 | RKZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 05V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; Custom Solutions Available; 3kVDC & 4kVDC Isolation Options; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Efficiency to 84% |
| MMBF5457LT1 | JFET - General Purpose Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF4392LT1 | 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4392LT1G | 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4392LT1G | 制造商:ON Semiconductor 功能描述:JFET |
| MMBF4393 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4393_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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