參數(shù)資料
型號(hào): MMBF4391LT1
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: JFET Switching Transistors
中文描述: 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
封裝: CASE 318-08, 3 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 139K
代理商: MMBF4391LT1
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 10. Effect of IDSS on Drain–Source
Resistance and Gate–Source Voltage
IDSS, ZERO–GATE VOLTAGE DRAIN CURRENT (mA)
,
D
r
20
10
0
30
40
50
30 40 50 60 70
20
R
10
0
1.0
2.0
3.0
4.0
5.0
,
G
V
(
Tchannel = 25
°
C
VGS(off)
rDS(on) @ VGS = 0
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero–Gate–Voltage Drain Current (IDSS) is the principle determi-
nant of other J–FET characteristics. Figure 10 shows the relationship
of Gate–Source Off Voltage (VGS(off)) and Drain–Source On Resis-
tance (rDS(on)) to IDSS. Most of the devices will be within
±
10% of the
values shown in Figure 10. This data will be useful in predicting the
characteristic variations for a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an MMBF4392
has an IDSS range of 25 to 75 mA. Figure 10 shows rDS(on) = 52
Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corre-
sponding VGS values are 2.2 volts and 4.8 volts.
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