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參數(shù)資料
| 型號(hào)： | MMBF2202PT1G |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
| 中文描述： | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, MINIATURE, CASE 419-04, SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | MMBF2202PT1G |
MMBF2202PT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10 A)
V
(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 16 Vdc, V
GS
= 0 Vdc)
(V
DS
= 16 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
V
GS(th)
1.0
1.7
2.4
Vdc
Static DraintoSource OnResistance
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
(V
GS
= 4.5 Vdc, I
D
= 50 mAdc)
r
DS(on)
1.5
2.0
2.2
3.5
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 200 mAdc)
g
FS
600
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 5.0 V)
(V
DS
= 5.0 V)
C
iss
C
oss
50
pF
Output Capacitance
45
Transfer Capacitance
(V
DG
= 5.0 V)
C
rss
20
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
(V
DD
= 15
Vdc,
R
L
= 75 , I
D
= 200 mAdc,
V
GEN
= 10 V, R
G
= 6.0 )
t
d(on)
2.5
ns
Rise Time
t
r
1.0
TurnOff Delay Time
t
d(off)
16
Fall Time
t
f
8.0
Gate Charge (See Figure 5)
(V
DS
= 16 V, V
GS
= 10 V,
I
D
= 200 mA)
Q
T
2700
pC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
I
S
0.3
A
Pulsed Current
I
SM
0.75
Forward Voltage (Note 3)
V
SD
1.5
V
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
Figure 1. On Resistance versus GateSource Voltage
10
0
V
GS
, GATESOURCE VOLTAGE (VOLTS)
I
D
= 200 mA
8
6
4
2
0
1
2
3
4
5
6
7
8
9
10
r
Figure 2. On Resistance versus Temperature
4.0
40
TEMPERATURE (
°
C)
V
GS
= 10 V
I
D
= 200 mA
3.5
3.0
2.5
2.0
0
20
0
20
40
60
80
100
120
140
160
r
1.5
1.0
0.5
V
GS
= 4.5 V
I
D
= 50 mA
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