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參數(shù)資料
| 型號： | MMBF2201NT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 3 PIN |
| 文件頁數(shù)： | 12/33頁 |
| 文件大?。?/td> | 324K |
| 代理商： | MMBF2201NT3 |
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MMBF2201NT1
3–61
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS
20
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
±100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
—
0.75
1.0
1.4
Ohms
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
gFS
—
450
—
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
—
45
—
pF
Output Capacitance
(VDS = 5.0 V)
Coss
—
25
—
Transfer Capacitance
(VDG = 5.0 V)
Crss
—
5.0
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
td(on)
—
2.5
—
ns
Rise Time
(VDD = 15 Vdc, ID = 300 mAdc,
tr
—
2.5
—
Turn–Off Delay Time
( DD
D
RL = 50 )
td(off)
—
15
—
Fall Time
tf
—
0.8
—
Gate Charge (See Figure 5)
QT
—
1400
—
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
—
0.3
A
Pulsed Current
ISM
—
0.75
Forward Voltage(2)
VSD
—
0.85
—
V
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
Figure 1. Typical Drain Characteristics
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 2. On Resistance versus Temperature
TEMPERATURE (
°C)
I D
,DRAIN
CURRENT
(AMPS)
R
DS
,ON
RESIST
ANCE
(OHMS)
0.5
0.6
0.7
0.8
0.9
1.0
0
4
08
79
10
0.6
0.8
1.0
1.2
1.4
1.6
0
–60
12
3
5
6
0.1
0.2
0.3
0.4
0.2
– 40 – 20
0
20
40
60
80
100
120 140
160
VGS = 4 V
VGS = 3.5 V
VGS = 2.5 V
VGS = 3 V
VGS = 4.5 V
VGS = 10 V
ID = 100 mA
ID = 300 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF2201PT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| MMBF2202PT1 | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
| MMBF2202PT1G | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
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