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參數(shù)資料
| 型號： | MMBF170LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 500 mA, 60 V |
| 中文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | TO-236, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 75K |
| 代理商： | MMBF170LT1 |
April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________
___________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
BS170
MMBF170
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1M
)
60
V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current - Continuous
500
500
mA
- Pulsed
1200
800
P
D
Maximum Power Dissipation
830
300
mW
Derate Above 25
°
C
6.6
2.4
mW/°C
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
T
L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistacne, Junction-to-Ambient
150
417
°C/W
BS170 Rev. C / MMBF170 Rev. D
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
S
D
G
1997 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF170LT1_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 500 mA, 60 V N-Channel SOT-23 |
| MMBF170LT1G | 功能描述:MOSFET 60V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF170LT1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMBF170LT3 | 功能描述:MOSFET 20V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF170LT3G | 功能描述:MOSFET 20V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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