參數(shù)資料
型號(hào)： MMBF170D87Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： TO-236AB, 3 PIN
文件頁(yè)數(shù)： 7/14頁(yè)
文件大?。?/td> 1256K
代理商： MMBF170D87Z
BS170
/
MMBF170
—
N-Channel
Enhance
m
e
n
tMode
Field
Effect
T
ransistor
2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BS170 / MMBF170 Rev. E1
2
Electrical Characteristics T
a=25°C unless otherwise noted
Note:
1. Pulse Test: Pulse Width
≤ 300μs, Duty Cycle ≤ 2.0%.
Symbol
Parameter
Conditions
Type
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 100 μAAll
60
V
IDSS
Zero Gate Voltage Drain Current
VDS = 25 V, VGS = 0 V
All
0.5
μA
IGSSF
Gate - Body Leakage, Forward
VGS = 15V, VDS = 0 V
All
10
nA
On Characteristics (Notes 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
All
0.8
2.1
3
V
RDS(ON)
Static Drain-Source On-Resistance VGS = 10 V, ID = 200 mA
All
1.2
5
Ω
gFS
Forward Transconductance
VDS = 10 V, ID = 200 mA
BS170
320
mS
VDS ≥ 2 VDS(on), ID = 200 mA MMBF170
320
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
All
24
40
pF
Coss
Output Capacitance
All
17
30
pF
Crss
Reverse Transfer Capacitance
All
7
10
pF
Switching Characteristics (Notes 1)
ton
Turn-On Time
VDD = 25 V, ID = 200 mA,
VGS = 10 V, RGEN = 25 Ω
BS170
10
ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 Ω
MMBF170
10
toff
Turn-Off Time
VDD = 25 V, ID = 200 mA,
VGS = 10 V, RGEN = 25 Ω
BS170
10
ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 Ω
MMBF170
10
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MMBF170LT1_08 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 500 mA, 60 V N-Channel SOT-23
MMBF170LT1G 功能描述:MOSFET 60V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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