- 您現(xiàn)在的位置：買賣IC網 > PDF目錄95959 > MMBF170 (LITE-ON SEMICONDUCTOR CORP) 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MMBF170 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | MMBF170 |
NEW
PRODUCT
DS30104 Rev. B-2
1 of 2
MMBF170
MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Maximum Ratings
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
MMBF170
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS
≤ 1.0M
VDGR
60
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 1)
Continuous
Pulsed
ID
500
800
mA
Total Power Dissipation (Note 1)
Derating above TA = 25
°C
Pd
225
1.80
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RθJA
556
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K6Z
Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Electrical Characteristics
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 100
A
Zero Gate Voltage Drain Current
IDSS
1.0
A
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
nA
VGS =
±15V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
0.8
2.1
3.0
V
VDS =VGS, ID =-250
A
Static Drain-Source On-Resistance
RDS (ON)
5.0
VGS = 10V, ID = 200mA
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
22
40
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
11
30
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
ns
VDD = 25V, ID = 0.5A,
VGS = 10V, RGEN = 50
Turn-Off Delay Time
tD(OFF)
10
ns
Note:1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
≤ 300s, duty cycle ≤ 2%.
POWER SEMICONDUCTOR
相關PDF資料 |
PDF描述 |
|---|---|
| MMBF175LT1 | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| MMBF2201NT3 | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMBF4092D87Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| MMBF4093D87Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| MMBF4091D87Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF170 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| MMBF170_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| MMBF170_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| MMBF170_D87Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF170_G | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。