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參數資料
| 型號： | MMBF0201NLT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23 |
| 中文描述： | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MMBF0201NLT1G |
MMBF0201NLT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10 A)
V
(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 16 Vdc, V
GS
= 0 Vdc)
(V
DS
= 16 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
V
GS(th)
1.0
1.7
2.4
Vdc
Static DraintoSource OnResistance
(V
GS
= 10 Vdc, I
D
= 300 mAdc)
(V
GS
= 4.5 Vdc, I
D
= 100 mAdc)
r
DS(on)
0.75
1.0
1.0
1.4
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 200 mAdc)
g
FS
450
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 5.0 V)
C
iss
45
pF
Output Capacitance
(V
DS
= 5.0 V)
C
oss
25
Transfer Capacitance
(V
DG
= 5.0 V)
C
rss
5.0
SWITCHING CHARACTERISTICS
(Note 2)
TurnOn Delay Time
(V
DD
= 15
Vdc, I
D
= 300 mAdc,
R
L
= 50 )
t
d(on)
2.5
ns
Rise Time
t
r
2.5
TurnOff Delay Time
t
d(off)
15
Fall Time
t
f
0.8
Gate Charge (See Figure 5)
Q
T
1400
pC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
I
S
0.3
A
Pulsed Current
I
SM
0.75
Forward Voltage (Note 2)
V
SD
0.85
V
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBF0201NLT1G | 制造商:ON Semiconductor 功能描述:MOSFET 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 20V, 300mA SOT-23 |
| MMBF0201NLT1G-CUT TAPE | 制造商:ON 功能描述:MMBF Series N-Channel 20 V 1 Ohm 225 mW Surface Mount Power MOSFET - SOT-23 |
| MMBF0202PLT1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts |
| MMBF102 | 功能描述:射頻JFET晶體管 N-CHANNEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| MMBF102LT1 | 制造商:Motorola Inc 功能描述: |
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