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參數(shù)資料
| 型號： | MMBD914L |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | High-Speed Switching Diode |
| 中文描述： | 高速開關二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | MMBD914L |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
IF
100
Vdc
Forward Current
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBD914LT1 = 5D
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 Adc)
V(BR)
100
—
Vdc
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR
—
—
25
5.0
nAdc
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
—
4.0
pF
Forward Voltage
(IF = 10 mAdc)
VF
—
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
—
4.0
ns
1. FR–5 = 1.0
2. Alumina = 0.4
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBD914LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
ANODE
3
CATHODE
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD914L1G | 制造商:ON Semiconductor 功能描述: |
| MMBD914LT1 | 功能描述:二極管 - 通用，功率，開關 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD914LT1G | 功能描述:二極管 - 通用，功率，開關 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD914LT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| MMBD914LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Speed Switching Diode |
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