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參數(shù)資料
| 型號： | MMBD6100LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Monolithic Dual Switching Diode |
| 中文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 60K |
| 代理商： | MMBD6100LT3G |
MMBD6100LT1
http://onsemi.com
2
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
t
rr
+10 V
2.0 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
10
0
I
R
1.0
0.1
0.001
0.01
10
20
30
40
50
I
F
1.0
1.2
0.2
0.4
0.6
0.8
Figure 4. Capacitance
,
T
A
= 85
°
C
T
A
= 40
°
C
T
A
= 25
°
C
,
T
A
= 25
°
C
T
A
= 55
°
C
T
A
= 85
°
C
T
A
= 150
°
C
T
A
= 125
°
C
1.0
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
C
2
4
6
8
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|---|---|
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| MMBD6100W_09 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SWITCHING DIODES |
| MMBD6100W-AU | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SWITCHING DIODES |
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