參數資料
型號： MMBD6050
廠商： VISHAY SEMICONDUCTORS
元件分類： 二極管(射頻、小信號、開關、功率)
英文描述： 0.2 A, SILICON, SIGNAL DIODE, TO-236AB
封裝： PLASTIC PACKAGE-3
文件頁數： 1/3頁
文件大?。?/td> 109K
代理商： MMBD6050
MMBD6050
Vishay Semiconductors
formerly General Semiconductor
Document Number 88219
www.vishay.com
14-May-02
1
Small-Signal Switching Diode
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
Mounting Pad Layout
Dimensions in inches
and (millimeters)
Top View
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Continuous Reverse Voltage
VR
70
V
Forward Current
IF
200
mA
Peak Forward Surge Current
IFSM
500
mA
Maximum Power Dissipation
TA = 25°C
225
mW
on FR-5 Board(1)
Derate above 25°C
Ptot
1.8
mW/°C
Maximum Power Dissipation
TA = 25°C
300
mW
on Alumina Substrate(2)
Derate above 25°C
Ptot
2.4
mW/°C
Thermal Resistance
FR-5
556
Junction to Ambient
Alumina
R
ΘJA
417
°C/W
Maximum Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Max.
Unit
Reverse Breakdown Voltage at IR = 100
AV(BR)R
70
–
V
Forward Voltage Drop at IF = 1mA
0.55
0.7
at IF = 100mA
VF
0.85
1.1
V
Reverse Leakage Current at VR = 50V
IR
–
0.1
A
Reverse Recovery Time at IF = IR = 10mA, Irr = 1mA
trr
–
4ns
Capacitance at VR = 0
Ctot
–
2.5
pF
Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Features
Silicon Epitaxial Planar Diode
Fast switching diode in case SOT-23, especially suited
for automatic insertion.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g Marking Code: 5AM
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
TO-236AB (SOT-23)
New Product
相關PDF資料
PDF描述
MMBD6050/E9 0.2 A, SILICON, SIGNAL DIODE, TO-236AB
MMBD7000WT/R7 0.2 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
MMBD7000 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
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相關代理商/技術參數
參數描述
MMBD6050_09 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SWITCHING DIODES
MMBD6050-E3-08 制造商:Vishay Siliconix 功能描述:MMBD6050-E3-08 - Bulk 制造商:Vishay Siliconix 功能描述:MMBD6050-E3-08 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
MMBD6050-E3-18 制造商:Vishay Siliconix 功能描述:MMBD6050-E3-18 - Bulk 制造商:Vishay Siliconix 功能描述:MMBD6050-E3-18 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
MMBD6050-G3-08 制造商:Vishay Siliconix 功能描述:MMBD6050-G3-08 - Bulk 制造商:Vishay Siliconix 功能描述:MMBD6050-G3-08 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
MMBD6050-G3-18 制造商:Vishay Siliconix 功能描述:MMBD6050-G3-18 - Bulk 制造商:Vishay Siliconix 功能描述:MMBD6050-G3-18 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
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