參數(shù)資料
型號: MMBD452LT1G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Dual Hot−Carrier Diodes Schottky Barrier Diodes
中文描述: SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 61K
代理商: MMBD452LT1G
MMBD452LT1
http://onsemi.com
2
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Total Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Minority Carrier Lifetime
I
F
, FORWARD CURRENT (mA)
Figure 3. Reverse Leakage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
,
IF
,
0.2
0.4
0.6
0.8
1.0
1.2
100
10
0
6.0
12
18
24
10
1.0
0.1
0.01
0.001
0
10
20
500
0
0
3.0
6.0
9.0
12
15
21
1.6
30
24
27
18
1.2
0.8
0.4
f = 1.0 MHz
T
A
= 40
°
C
T
A
= 85
°
C
T
A
= 25
°
C
1.0
0.1
30
40
50
60
70
80
100
90
KRAKAUER METHOD
0
2.8
2.4
2.0
30
T
A
= 100
°
C
75
°
C
25
°
C
,
,
400
300
200
100
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50 INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION
STORAGE
CONDUCTION
DUT
I
F(PEAK)
I
R(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
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