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參數(shù)資料
| 型號： | MMBD4448-T3 |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | SURFACE MOUNT FAST SWITCHING DIODE |
| 中文描述： | 表面貼裝快速開關(guān)二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 93K |
| 代理商： | MMBD4448-T3 |
Features
l
Fast Switching Speed
l
Surface Mount Package Ideally Suited for Automatic Insertion
l
For General Purpose Switching Applications
l
High Conductance
Mechanical Data
l
Case: SOT-23, Molded Plastic
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Polarity: See Diagram
l
Marking: KA3
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Characteristic
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
Value
100
Unit
V
Non-Repetitive Peak Reverse Volt.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current(Note1)
Average Rectified Output Current
Non-Repetitive Peak @ t<=1.0s
Forward Surge Current @ t=1.0us
Power Dissipation(Note 1)
Thermal Resistance(Note 1)
Operation/Storage Temp. Range
75
V
53
500
V
mA
Io 250 mA
I
FSM
2
4
A
A
Pd
R
350
357
mW
K/W
o
C
Tj, T
STG
-55 to +150
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Charateristic
Symbol
Min
0.62
-----
Max
0.72
0.855
1
1.25
2.5
50
30
25
4
4
Unit
Test Cond.
I
F
=5.0mA
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=75V
V
R
=75V Tj=150
V
R
=25V Tj=150
V
R
=20V
V
R
=0V, f=1.0MHz
Maximum Forward
Voltage Drop
V
FM
V
uA
uA
uA
nA
pF
ns
Maximum Peak
Reverse Current
I
RM
-----
o
C
o
C
Junction Capacitance
Reverse Recovery Time
Cj
t
rr
-----
-----
Note
: 1. Valid provided that terminals are kept at ambient temperature
MMBD4448
Surface Mount
Schottky Barrier
Switching Diode
350mW
www.
mc c semi
.c om
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
A
B
C
D
E
F
G
H
J
.079
2.000
imm
.031
.800
.035
.900
.037
.950
.037
.950
2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM
omp
onents
21201 Itasca Street Chatsworth
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| MMBD4448TA | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Plastic-Encapsulated Switching Diode |
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| MMBD4448TCPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:SWITCHING DIODE ARRAY |
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