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參數(shù)資料
| 型號(hào)： | MMBD4148L99Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | MMBD4148L99Z |
MMBD4148
/
SE
/
CC
/
CA
MMBD4148, Rev. C
Small Signal Diodes
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
MARKING
MMBD4148
5H
MMBD4148CA D6
MMBD4148CC D5
MMBD4148SE D4
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
MMBD4148 / SE / CC / CA
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
I
F(AV)
Average Rectified Forward Current
200
mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
1
2
3
5H
3
1
2
SOT-23
Connection Diagrams
4148
4148SE
4148CC
4148CA
11
3
2
1
2
3
1
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 5.0 A
I
R = 100 A
75
100
V
VF
Forward Voltage
I
F = 10 mA
1.0
V
I
R
Reverse Current
VR = 20 V
V
R = 20 V, TA = 150°C
VR = 75 V
25
50
5.0
nA
A
CT
Total Capacitance
V
R = 0, f = 1.0 MHz
4.0
pF
t
rr
Reverse Recovery Time
I
F = 10 mA, VR = 6.0 V,
IRR = 1.0 mA, RL = 100
4.0
ns
2NC
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