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參數(shù)資料
| 型號： | MMBD301LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 90K |
| 代理商： | MMBD301LT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
MAXIMUM RATINGS
(TJ = 125
°
C unless otherwise noted)
MBD301
MMBD301LT1
Rating
Symbol
Value
Unit
Reverse Voltage
VR
PF
30
Volts
Forward Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
280
2.8
200
2.0
mW
mW/
°
C
Operating Junction
Temperature Range
TJ
–55 to +125
°
C
Storage Temperature Range
Tstg
–55 to +150
°
C
DEVICE MARKING
MMBD301LT1 = 4T
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10
μ
A)
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (VR = 25 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
V(BR)R
CT
IR
VF
VF
30
—
—
Volts
—
0.9
1.5
pF
—
13
200
nAdc
—
0.38
0.45
Vdc
—
0.52
0.6
Vdc
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBD301/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 182–02, STYLE 1
(TO–226AC)
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
2
3
1
2
3
CATHODE
1
ANODE
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
2
CATHODE
1
ANODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBD301LT1 | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| MMBD301L | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| MMBD353LT1 | Dual Hot Carrier Mixer Diodes |
| MMBD352 | Dual Hot Carrier Mixer Diodes |
| MMBD352LT1 | Dual Hot Carrier Mixer Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD301LT1G | 功能描述:肖特基二極管與整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMBD301LT3 | 功能描述:肖特基二極管與整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMBD301LT3G | 功能描述:肖特基二極管與整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMBD301LTI | 制造商:- - 功能描述:Detector Diode, Sot-23 制造商:Motorola Inc 功能描述:Detector Diode, Sot-23 制造商:ON Semiconductor 功能描述:Detector Diode, Sot-23 |
| MMBD301M3T5G | 功能描述:肖特基二極管與整流器 SS SCHOTTKY DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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