- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384740 > MMBD2835LT1G (ON SEMICONDUCTOR) Monolithic Dual Switching Diodes PDF資料下載
參數(shù)資料
| 型號： | MMBD2835LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Monolithic Dual Switching Diodes |
| 中文描述： | 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | MMBD2835LT1G |
MMBD2835LT1, MMBD2836LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
R
= 100 Adc)
MMBD2835LT1
MMBD2836LT1
V
(BR)
35
75
Vdc
Reverse Voltage Leakage Current (Note 3)
(V
R
= 30 Vdc)
(V
R
= 50 Vdc)
MMBD2835LT1
MMBD2836LT1
I
R
100
100
nAdc
Diode Capacitance (V
R
= 0 V, f = 1.0 MHz)
C
T
4.0
pF
Forward Voltage (I
F
= 10 mAdc)
Forward Voltage
(I
F
= 50 mAdc)
Forward Voltage
(I
F
= 100 mAdc)
V
F
1.0
1.0
1.2
Vdc
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
3. For each individual diode while the second diode is unbiased.
t
rr
4.0
ns
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
t
rr
+10 V
2.0 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBD2836LT1G | Monolithic Dual Switching Diodes |
| MMBD2837LT1G | Monolithic Dual Switching Diodes |
| MMBD2838LT1G | Monolithic Dual Switching Diodes |
| MMBD301LT1G | Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes |
| MMBD301LT3 | Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD2835LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Monolithic Dual Switching Diodes |
| MMBD2836 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Surface mount switching diode |
| MMBD2836G | 制造商:ZOWIE 制造商全稱:Zowie Technology Corporation 功能描述:Monolithic Dual Switching Diode |
| MMBD2836LT1 | 功能描述:二極管 - 通用，功率，開關(guān) 75V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD2836LT1G | 功能描述:二極管 - 通用，功率，開關(guān) 75V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。